Fig. 2: Characterization of the manufacturing process.
From: High-sensitivity high-resolution X-ray imaging with soft-sintered metal halide perovskites
a, SEM image of the grid photoresist structure. The bird’s eye view shows the regular shape of the grid. The width of the structure is 10 µm. The pixel pitch is 50 µm. b, Optical microscopy image of the grid structure. The bright areas are the bottom electrodes defining the pixel size. c, Photograph of the MAPbI3 absorber layer attached to the backplane. The size of the MAPbI3 absorber layer is 3 × 4 cm2 and fully covers the area of the electrode array. d–f, Cross-sectional SEM images of different MAPbI3 layers: bottom part of an 880-µm-thick absorber layer above an indium tin oxide glass with the photoresist grid visible and indicated with arrows (d); a closer look into the wafer shows grains with sizes between 0.5 and 5.0 µm and pores between them (e); grains of the recrystallized MAPbI3 layer with smaller grains up to 2 µm (f).
