Extended Data Fig. 8: NBTI evaluation using up-sweeps.
From: Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning
In (a) the degradation on Type 2 devices is compared when evaluated using up sweeps in comparison to down sweeps. In (b) it can be seen that when using up sweeps for the evaluation of NBTI degradation a fast trapping component is active which also increases the over-recovery towards more positive Dirac voltages.
