Fig. 5: Energy per bit of the MO modulator as a function of temperature for a bit rate of 2 Gbps.
From: An integrated magneto-optic modulator for cryogenic applications
a, Measured energy per bit of the DUT. The measured value of Eb is as low as 3.9 pJ per bit at 4 K and is limited by the resistance of the electromagnet. b, Simulated energy per bit of the DUT. A comparison between the simulations and measurements shows strong agreement for the inductive energy term, LI2/2. However, the theoretical value of ohmic dissipation in the electromagnet, RI2/rb, shows room for improvement by reducing the cryogenic resistance of the electromagnet. c, Energy per bit that is achievable after optimizing the device by reducing the footprint, thinning the SGGG substrate and considering undercoupled resonators.
