Author Correction: How to report and benchmark emerging field-effect transistors

Correction to: Nature Electronics https://doi.org/10.1038/s41928-022-00798-8, published online 28 July 2022.

In the version of this article initially published, the first entry in Table 2 referred to the carrier density of I_max, which has since been deleted. The Fig. 3a caption, third sentence, contained “not at the same n_s,” which has been removed, and the Fig. 3b caption starting “Benchmarking I_sat versus n” has been altered to read “versus n_s.” Additionally, the Supplementary information has been updated after the phrase “carrier densities at which I_min is extracted” was removed from Note S1 and the Fig. S1 caption. The clarifications have been made in the HTML and PDF versions of the article.