Extended Data Fig. 4: Transport properties of MoTe2-based device (PFGFET #6) with 16.2 nm hBN tunnelling layer. | Nature Electronics

Extended Data Fig. 4: Transport properties of MoTe2-based device (PFGFET #6) with 16.2 nm hBN tunnelling layer.

From: Reconfigurable logic-in-memory architectures based on a two-dimensional van der Waals heterostructure device

Extended Data Fig. 4

Transport properties of MoTe2-based device (PFGFET #6) with 16.2 nm hBN tunnelling layer, indicating that ambipolar MoTe2 has similar behaviours with such device architecture. (a) Optical and AFM images of the device. Transfer curves of the PFGFET device acquired at (b) memory mode (VTG = ± 5 V) and (c) field effect transistor mode (VCG-pulse = ±15 V). (d) The reconfigurability of PFGFET at field effect transistor mode. The PFGFET is initially programmed at p-type state with VCG-pulse of -15 V. When an opposite VCG-pulse (+15 V) is introduced, this state will be erased, resulting in n-type state. (e) Switching and (f) retention performance of reconfigurable PFGFET #4. The results indicate that the ambipolar MoTe2 exhibits similar reconfigurable memory and FET capacity, that is, enables the coexistence of memory and logic function in a single unit.

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