Fig. 1: TFT electrical properties.
From: Tin perovskite transistors and complementary circuits based on A-site cation engineering
a, Structural scheme of the Sn perovskite TFT. The arrow depicts the charge-carrier transport path. b, μFE and Ion/Ioff of TFTs based on channels fabricated from mixed precursors with different Cs molar ratios, the x in (CsxFA1–x)7PEA2. The error bars are calculated from ten devices per type, and data are presented as mean ± standard deviation. c,d, Transfer (c) and output (d) characteristics of the optimized TFTs (Cs ratio = 10 mol%). Ig in c indicates the gate leakage current. The |IDS|1/2 versus VGS data of the forward scan are shown in the blue linear line, corresponding to the right y axis. VDS = −40 V. Channel width/length = 1,000 μm/200 μm. Supplementary Fig. 4 shows the electrode geometry. e, Transfer characteristics of 50 individual CsFAPEA TFTs fabricated from ten different batches. The inset shows the μFE statistics. f, Representative μFE values of reported perovskite TFTs based on different channel films. LTPS, low-temperature polysilicon level (μFE ≈ 70 cm2 V−1 s−1, Ion/Ioff ≈ 107).
