Fig. 2: Film characterization.
From: Tin perovskite transistors and complementary circuits based on A-site cation engineering

a–e, SEM (a), AFM (b), XRD (c), ultraviolet–visible (d) and photoluminescence (e) data of the perovskite films. Diffraction intensities in c are multiplied by five for the FA film and divided by three for the PEA film, for clearer display, and the diffraction patterns of the (PEA)2SnI4 film (denoted as PEA) are provided for reference. All the films were controlled with a similar thickness (~30 nm) produced under the same deposition conditions for the TFT semiconducting layers.