Fig. 3: Crystallization and mechanism.
From: Tin perovskite transistors and complementary circuits based on A-site cation engineering
a–d, GIWAXS for surface structure (incident angle of 0.2°) (a and c) and bottom structure (incident angle of 2.0°) (b and d) of FAPEA and CsFAPEA films. e, Dynamic light scattering data showing the particle size distribution in the precursor solutions of FAPEA and CsFAPEA. f, Illustration of the free reaction enthalpy versus the reaction coordinates, adapted from another work36.
