Table 1 Comparison of key performance parameters for 100 G+ optical transmitters

LiNbO₃ (MZI)⁵

100 G OOK, 112 G PAM-4

N.A.

Offline DSP, LMS equalizer, 31 taps

SHF 807

3.60 W

No

>32 pJ bit^–1

Polymer (MZI)¹⁰

200 G PAM-4

Offline DSP, raised cosine filter

Offline DSP, linear equalization

SHF 804 B

2.00 W

No

>10 pJ bit^–1

DML²

256 G PAM-4

No

Offline DSP, 101-tap linear, 61-tap nonlinear equalization

SHF 840 M

1.25 W

No

>4.80 pJ bit^–1

SOI (RRM)¹⁶

120 G OOK, 220 G PAM-4, 240 G PAM-8

Offline DSP, pre-equalization

Offline DSP, NN + MLSE

SHF 807 C

3.00 W

No

>12.50 pJ bit^–1

GeSi EAM¹³

224 G PAM-4

Offline DSP, pulse shaping/pre-emphasis

Offline DSP, FFE DFE PNLE

SHF 804 B

2.00 W

No

>8.92 pJ bit^–1

SOI (MZI)⁴³

64 G OOK, 138 G PAM-4, 102 G PAM-8, 408 G DP-64QAM

DSP equalization

Coherent DSP

130 nm SiGe bipolar CMOS

0.66 W^a

Yes (flip-chip)

7.35 pJ bit^–1

SOI (RRM)⁴⁴

112 G PAM-4

No

5-tap TDECQ filter

28 nm CMOS

0.16 W^a

Yes (flip-chip)

1.43 pJ bit^{–1 a}

MOSCAP (MZI)⁴⁵

100 G PAM-4

No

5-tap TDECQ filter

28 nm CMOS

0.108 W^a

Yes (flip-chip)

1.08 pJ bit^{–1 a}

Plasmonic (MZI)⁹

120 G OOK

No

Offline DSP, 101 tap

Bipolar

0.900 W^a

Yes (monolithic)

7.50 pJ bit^{–1 a}

SOI (MZI)³¹

112 G OOK

No

7-tap FFE

28 nm CMOS

0.178 W^b

Yes (flip chip)

1.59 pJ bit^{–1 b}

This work SOI (MZI)

112 G OOK

No

6-tap FFE

28 nm CMOS

0.045 W^a 0.078 W^b

Yes (flip chip)

0.40 pJ bit^{–1 a}, 0.70 pJ bit^{–1 b}

This work SOI (MZI)

200 G PAM-4

No

12-tap FFE

28 nm CMOS

0.107 W^a 0.177 W^b

Yes (flip chip)

0.54 pJ bit^{–1 a}, 0.88 pJ bit^{–1 b}

This work SOI (MZI)

224 G PAM-4

No

12-tap FFE

28 nm CMOS

0.122 W^a 0.190 W^b

Yes (flip chip)

0.54 pJ bit^{–1 a}, 0.855 pJ bit^{–1 b}