Silicon carbide power devices are an important component in a variety of technologies. Tsunenobu Kimoto recounts how the first 1 kV silicon carbide Schottky diodes were created.
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Kimoto, T. How we made the 1,000 V silicon carbide Schottky diode. Nat Electron 7, 933 (2024). https://doi.org/10.1038/s41928-024-01252-7
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DOI: https://doi.org/10.1038/s41928-024-01252-7
