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2D materials

Scaling the contacted poly pitch of 2D transistors

Nature Electronics volume 8, pages 378–379 (2025)Cite this article

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Composite metal contacts deposited under high-vacuum conditions can be used to create molybdenum disulfide field-effect transistors with low contact resistance and a contacted poly pitch of just 60 nm.

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Fig. 1: 2D transistors with scaled contact and channel lengths.

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Authors and Affiliations

  1. Institute for Advanced Study, Shenzhen University, Shenzhen, P. R. China

    Xue Chen & Ye Zhou

  2. School of Physics, Changchun Normal University, Changchun, P. R. China

    Xue Chen

  3. Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China

    Su-Ting Han

  4. Research Institute for Smart Energy, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China

    Su-Ting Han

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  1. Xue Chen
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  2. Su-Ting Han
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  3. Ye Zhou
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Correspondence to Ye Zhou.

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Chen, X., Han, ST. & Zhou, Y. Scaling the contacted poly pitch of 2D transistors. Nat Electron 8, 378–379 (2025). https://doi.org/10.1038/s41928-025-01383-5

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