Fig. 2: Technology computer-aided design modelling of fin-width variation to match experimental and simulated subthreshold characteristics. | Nature Electronics

Fig. 2: Technology computer-aided design modelling of fin-width variation to match experimental and simulated subthreshold characteristics.

From: Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications

Fig. 2

a, SEM imaging showing the fin-width variation. b, Simulated transfer characteristics for different fin widths. c, Matching of the experimental and simulated subthreshold gm. Inset: the experimental subthreshold gm shoulders from Fig. 1(d) being compared with the simulated gm. The model is calibrated such that experimental gm shoulders and the change in slope of simulated gm have almost the same VGS. This matching is indicated by the two arrows. d, Comparison of the simulated Poisson distribution of 1,000 fin widths with the experimentally obtained width distribution. The plot shows number of fins (in percentage) as a function of absolute fin width. Here the value of one on the x axis corresponds to the mean fin width, λ.

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