Fig. 3: UV-vis absorbance data to 14.8 GPa.
From: Phase transition mechanism and bandgap engineering of Sb2S3 at gigapascal pressures
a Results of absorbance from room pressure to 14.8 GPa. b Bandgap fitting by K-M equation (red) and calculated by DFT with HSE06 (blue). c Electronic structure of Sb2S3 with bandgap 1.55 eV at ambient pressure. d At 5.2 GPa, Sb2S3 is converted into a direct bandgap semiconductor with bandgap 1.35 eV. e Sb2S3 undergoes a 2D-3D phase transition, and the bandgap is compressed to 0.86 eV at 11 GPa.
