Fig. 5
From: Mapping the band structure of GeSbTe phase change alloys around the Fermi level
Two-photon ARPES. a EMC of unoccupied states with energy regions of conduction band (CB) highlighted and presumable topological surface state (state in gap) marked by arrows; b CECs within the bulk band gap for different \(E - E_{\mathrm{F}}^{{\mathrm{PES}}}\) as indicated; c green lines: MDCs along k y at \(E - E_{\mathrm{F}}^{{\mathrm{PES}}}\) as marked (jagged lines) with fits consisting of two Voigt peaks (smooth lines); red, blue dots: peak positions of MDC Voigt fits averaged for the MDCs along k x and k y ; red, blue lines: linear fits to the red and blue dots; d circular dichroism (CD) intensity of the 2P-ARPES data of a with CB and bulk band gap region (gap) marked; e CD intensity of the VB states recorded by one photon ARPES; f CD intensity after energy integrating: left: \(E - E_{\mathrm{F}}^{{\mathrm{PES}}}\) = 200–350 meV from d, right: \(E - E_{\mathrm{F}}^{{\mathrm{PES}}}\) = −580−0 meV from e (VB)
