Fig. 1
From: Tunnel spectroscopy of localised electronic states in hexagonal boron nitride
Current-bias voltage characteristics of Device 1. a Measured current-bias voltage curves, I(Vb), when the gate voltage, Vg = 0 (red), Vg = 0.8 V (green) and Vg = 1.7 V (blue) (T = 1.75 K). Top left inset: schematic diagram of the device showing the graphite gate (Grg) and electrodes through which the current flows (Grb,t) (horizontal black lines), hBN layers (lime green), the voltage configuration and definition of spatial axes. Bottom right inset: band diagram showing the densities of states Db and Dt in the bottom and top graphene layers and their chemical potentials, μb and μt. The electron tunnels through a localised state ‘A’ of energy EA and spatial position zA, see open circle. b Differential conductance, G = dI/dVb of the I(Vb) curves in a
