Fig. 3
From: Operation of graphene magnetic field sensors near the charge neutrality point
Gate-bias Vg dependence of resistivity and sensitivity. a Longitudinal resistivity ρxx–Vg and b Hall resistivity ρxy–Vg and c the current-related sensitivity SI–Vg for various magnetic field B. The dashed lines in (b) are theoretical characteristics calculated from the model, which show good agreement with the experiment, especially on the left side of the CNP. The dashed line in (c) shows the fit to the data that was used to extract the residual carrier density n0 used in our model. The peaking of |ρxy| places a limitation on sensitivity and affects the optimum bias condition
