Fig. 5
From: Operation of graphene magnetic field sensors near the charge neutrality point
The influence of material-quality parameters on sensitivity and linearity. a Modeled current-related sensitivity |SI| and b maximum linearity error αmax vs Vg – VCNP at various minimum carrier density n0 for mobility µ = 2000 cm2 V−1 s−1, magnetic field B = 2 T. c |SI| vs 1/n0, as extracted from (a). d modeled |SI| and e αmax vs Vg – VCNP for equal electron and hole mobilities (µe = µh = µ). f modeled |SI| and g αmax vs Vg – VCNP for unequal electron and hole mobilities (µe ≠ µh) for n0 = 1 × 1011 cm−2, B = 2 T. Vg is the gate bias and VCNP is the charge neutrality point. Symbols in (c) and (d) show the realizable SI for αmax = 10% for different mobilities. The modeling shows that the realizable SI values, which are inversely proportional to n0, are reduced by linearity constraints
