Fig. 6
From: Operation of graphene magnetic field sensors near the charge neutrality point
The influence of material-quality parameters on magnetoresistance. a Modeled magnetoresistance MR vs gate-bias Vg – VCNP at various minimum carrier density n0 for mobility µ = 2000 cm2 V−1 s−1, magnetic field B = 2 T and b modeled MR vs Vg – VCNP for various mobilities (µe = µh = µ) for n0 = 1 × 1011 cm−2, B = 2 T. VCNP is the charge neutrality point. The modeling shows that the key to achieving a high MR in graphene is having a high µ, rather than a low n0
