Fig. 7
From: Operation of graphene magnetic field sensors near the charge neutrality point
Dependence of realizable current-related sensitivity on mobility and linearity. Modeled a realizable current-related sensitivity \(S_I^{\mathrm{R}}\), b maximum linearity error αmax, c |Vg – VCNP|, and d longitudinal resistivity ρxx vs mobility for various αmax constraints for n0 = 1 × 1011 cm−2 and B = 2 T. Gate-bias Vg is optimized for the highest \(S_I^{\mathrm{R}}\) within the αmax constraints. VCNP is the charge neutrality point. These results show the interplay between the linearity constraint and mobility in determining the realizable SI values; in particular a stringent linearity constraint together with a high mobility results in a substantial reduction in \(S_I^{\mathrm{R}}\)
