Fig. 8
From: Operation of graphene magnetic field sensors near the charge neutrality point
The dependence of realizable absolute sensitivity on mobility and linearity. a Modeled realizable absolute sensitivity \(S_{\mathrm{A}}^{\mathrm{R}}\) and b maximum linearity error αmax vs mobility for various αmax constraints for minimum carrier density n0 = 1 × 1011 cm−2, magnetic field B = 2 T and power P = 1 mW. Gate-bias Vg is optimized for the highest \(S_{\mathrm{A}}^{\mathrm{R}}\) within the αmax constraints. The inset shows the dependence of αmax on (µcB)2, where the critical mobility µc is determined from the break points in (b) and the dashed line is a linear fit. The results show that, when mobility is higher than µc, the linearity constraints substantially reduce \(S_{\mathrm{A}}^{\mathrm{R}}\) compared with the unconstrained case
