Fig. 2
From: Dynamically tuned non-classical light emission from atomic defects in hexagonal boron nitride
Photo-physics of hexagonal boron nitride (h-BN) single-photon emitters. a A representative micro-photoluminescence spectrum excited with a 532 nm continuous-wave laser and recorded for the excitation power density of ~40 W/cm2 at 10 K, showing multiple narrow zero-phonon emission lines (ZPLs). Peaks labeled ZPL1, ZPL2 and ZPL3 are used in the experiments of b–d. The peak marked with asterisk corresponds to the E2g Raman mode of h-BN42. b Normalized and background-corrected low-temperature intensities of peaks labeled ZPL1 (blue triangles), ZPL2 (red circles) and ZPL3 (green squares) in a as a function of the polarization angle with respect to the SAW propagation direction (i.e., x-axis in Fig. 1) aligned at 0°. Solid traces are fits to a cos2(θ) function proving a high linear polarization degree of the emitted light. c Photoluminescence lifetime exhibiting excited-state time constants indicated in the figure, measured for the three signals in b. The decay curves are vertically offset for clarity. d Normalized second-order correlation function g(2)(τ) of the same spectral lines as in b and c illustrating photon anti-bunching. Solid traces are theoretical fits of the experimental data obtained using Supplementary Eq. (1) in Supplementary Note 3. Measurements in b and d are acquired under the same laser excitation conditions as in a. The 442-nm laser pulses are used for c. The same color and symbol code is applied for all plots
