Fig. 3: Optimized tunneling magnetoresistance (TMR) at external magnetic field B = ±40 mT.
a Maps of current I (amperes) as a function of B and gate voltage VG1 for the up (red arrow) and down-sweep (blue arrow), for the cross-section C1 in Fig. 1d at bias voltage VSD = 10 μV. b Maximum current \({I}_{\max }\) as a function of B for the up (red) and down-sweep (blue) extracted from Fig. 3a. c, I along cross-section C1 parameterized by VG1 for all four magnetization states, with the (−, −) and (+, −) configurations measured at B = −40 mT, and the (+, +) and (−, +) configurations at B = +40 mT. d TMR for magnetization states (+, +) and (−, +) at B = +40 mT for cross sections C2 (red) and Copt (blue). Copt refers to the optimal cross-section along which the TMR for magnetization states (+, +) and (−, +) shows the maximum value. The black dashed line shows the TMR extracted from the model for cross-section Copt, with the parameters obtained from fits to the data in Fig. 3b.
