Fig. 1: Controlled growth of in-plane selective area InSb networks.
From: In-plane selective area InSb–Al nanowire quantum networks
a The four growth directions on a (111)B substrate suitable for in-plane nanowire growth. b Time evolution for growth of an in-plane InSb (red) nanowire network on an InP (111)B substrate (gray) with a 20 nm thick SixNy mask (light blue) for selectivity. The growth fronts remain the same during the growth of the network. Schematics of the cross-sections below show the relative height of the InSb compared to the height of the mask. The network grows much faster in the in-plane direction than the out-of-plane direction (Supplementary Fig. 5). c The in-plane InSb nanowires controllably grow in the <112> and the <110> families of crystal directions. Scale bar is 1 µm. d Zoom-in on the corners of the structure in c. Scale bar is 50 nm. The {110} facets that form the growth fronts are still visible at these edges.
