Fig. 4: Aharonov–Bohm and WAL effects in InSANe nanowire loops.
From: In-plane selective area InSb–Al nanowire quantum networks
a Magneto-conductance of device A shows Aharonov–Bohm (AB) oscillations with a period of ~2 mT. b Fast Fourier transform (FFT) spectrum of the AB oscillations from device A, indicating the frequency peaks up to the third-order harmonic. Inset, false-color scanning electron microscopy (SEM) image of the device. An InSb nanowire loop (red) is in contact with normal metal electrodes Cr/Au (yellow) with an out-of-plane magnetic field and a fridge temperature of 20 mK. The device has a global top gate that is not shown in the SEM image. Scale bar is 1 µm. The measured AB period matches the loop area of ~2 µm2. c Magneto-conductance of device B shows a larger AB period and oscillation amplitude (~0.6 e2/h), due to its smaller loop area compared to device A. The arrows indicate oscillations due to higher AB harmonics. d FFT spectrum of device B (SEM in inset with scale bar 1 µm) showing up to five harmonic peaks. e Magneto-conductance of device B (ensemble averaged) shows a sharp WAL peak at B = 0 T.
