Fig. 4: Transport properties.
From: Electron-polaron dichotomy of charge carriers in perovskite oxides
Temperature dependence of resistivity for a 30 nm 4% doped CaMnO3 (CCMO4) sample, and its fit using a two-band model with the light-carrier and heavy-carrier channels plotted together with the individual contributions of the channels. Inset: Hall effect for this sample at 130 K, and its simulation using carrier concentrations ne = 2.8 × 1020 cm−3 and mobility μ = 9.9 cmV−1 s−1 for the light-carrier channel, respectively ne = 1.6 × 1021 cm−3 and μ = 3.6 cmV−1 s−1 for the heavy-carrier one.
