Fig. 3: Schematic device structure and measured current density (J)–voltage (V) curves.
From: Experimental demonstration of energy-transfer ratchet intermediate-band solar cell
a Energy-transfer ratchet IBSC (ETR-IBSC) structure based on Er-doped GaAs, b J–V curves obtained under 1 sun illumination with an AM1.5 spectrum, and c external quantum efficiency spectra of all five devices under a bias voltage of −5 V, respectively.
