Fig. 4: Topological interconnects.
From: Topological electronics
a Numerically calculated mobility of electrons in Bi2Se3 nanowire interconnects when considering non-ideal effects, such as roughness scattering and phonons, as a function of the simulation temperature for various Fermi levels59. Reprinted by permission from ref. 59, copyright 2014. b Theoretical resistance, normalized by the length, of different interconnect technologies compared to that of Bi2Se3 nanowire interconnects as calculated for two different mean-free paths of 10 nm (blue) and 100 nm (orange)60.
