Fig. 3: Temperature dependence of the conductance suppression in the Coulomb gap.
From: A magnetically-induced Coulomb gap in graphene due to electron-electron interactions
a Dependence of the conductance, G, on bias voltage, Vb, G(Vb), when the applied gate voltage Vg = 1.65 V and magnetic field B = 3.75 T for temperatures of T = 0.3 K (blue) and T = 5 K (red). The width, ΔVb of the dip in G is measured as the distance between the peaks in G. Inset shows G(Vb) when Vg = 1.65 V and B = 0 T for temperatures of T = 0.3 K (blue) and T = 4 K (red). b Arrhenius plot of G(Vb = 0) as a function 1/T when B = 3.75 T showing the thermal activation behaviour with characteristic energy, Ea.
