Fig. 4: Dark current-voltage characteristics of heterojunctions at various temperatures. | Communications Physics

Fig. 4: Dark current-voltage characteristics of heterojunctions at various temperatures.

From: Carrier transport mechanisms of titanium nitride and titanium oxynitride electron-selective contact in silicon heterojunction solar cells

Fig. 4

a, b Dark current-voltage characteristics, equivalent circuit diagram, structure schematic of the heterojunction formed by as-deposited TiN and n-Si under different temperatures (±200 mA is the clamp current for the test instrument, the positive electrode is connected to the Ag electrode on the TiN or TiOxNy side). d, e Dark current-voltage characteristics of heterojunction formed by TiOxNy and n-Si. c The as-deposited heterojunction dV/dI-1/(I + Is) characteristics under forward bias (The inserted picture is the ideal factor for different temperatures calculated from the slope). f dV/dI-1/(I + Is) characteristics of annealed heterojunction under forward bias. The various colors correspond to the characteristic curves observed at varying temperatures.

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