Fig. 1: Transport characteristics of a GaAs/AlGaAs heterostructure Hall bar device at T = 25 mK. | Communications Physics

Fig. 1: Transport characteristics of a GaAs/AlGaAs heterostructure Hall bar device at T = 25 mK.

From: Non-equilibrium excited-state fractionally quantized Hall effects observed via current bias spectroscopy

Fig. 1

a The diagonal (Rxx) and off-diagonal Hall (Rxy) resistances are exhibited between 4 ≤ B ≤ 8 Tesla, corresponding to the filling factor range 2 ≤ ν ≤ 1, to highlight observable FQHE. b Rxx and Rxy are exhibited for the full range 0 ≤ B ≤ 8.5 Tesla. c Rxy are exhibited for the IQHE regime between 0 ≤ B ≤ 4.5 Tesla, for different DC bias currents (IDC) between 0 ≤ IDC ≤ 1 μA in steps of ΔIDC = 0.25 μA. The traces, which indicate that IDC does not modify observable IQHE (marked by horizontal lines), have been offset along the abscissa by 1 Telsa for the sake of clarity.

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