Fig. 2: Transient absorption measured carrier relaxations and non-adiabatic molecular dynamics simulations.
From: Valley resolved dynamics of phonon bottleneck in semiconductor molybdenum ditelluride
a Normalized decay of photo-induced bleach peaks. Solid lines, multiexponential fits. b Schematic illustration of carrier relaxation pathways in the simplified electronic bands. I, intravalley scattering accompanied by the emission of optical phonons (OPs, red). II, intervalley scattering accompanied by the emission of acoustic phonons (APs, blue). III, indirect recombination. IV, defect-assisted recombination. V, direct recombination. c Normalized decays of PIB-A under various excitation fluences, with a biexponential fit. Inset, linear dependence of bleach amplitude on excitation fluence. d Simulated three-stage energy decay of Γe. Processes i–iii, see Supplementary Note 1. e Cooling pathways of Γe in the conduction band at 0 K, concluded from the NAMD simulations. i, intravalley scattering in the Λ valley. ii and iii, intervalley scattering between the Λ and K valleys.
