Fig. 4: Surface characterisation of 1T′-MoTe2 films.
From: Selective phase growth and precise-layer control in MoTe2
AFM measurement over the 5 μm × 5 μm area and a representative 2D topographic profile of the interface between few-layered 1T′-MoTe2 and SiO2/Si substrate (a); the variation in height between the film and the substrate measured on a 4-layered 1T′-MoTe2 film from Fig. 4a (b); 2D topographic profile of a 5 μm × 5 μm area of 4-layered MoTe2 on SiO2/Si substrate (c); 532 nm Raman spectrum from a typical four-layered 1T′-MoTe2 on 300 nm SiO2/Si (d).
