Fig. 5: Atomic structure-dependent NO2 sensing behavior.
From: Active-matrix monolithic gas sensor array based on MoS2 thin-film transistors
a ∆VTH according to NO2 exposure and schematic image of NO2 adsorption on MoS2 grain boundaries (inset). b Comparison of μFE between exfoliated and two-step-grown MoS2 TFTs under different concentrations of NO2. c Calculated activation energy (EA) as a function of VGS and d density of states for MoS2 TFT with and without NO2 gas exposure.
