Fig. 1: Device structure and characterization.
From: High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics
a Device schematic of back-gated MoS2 phototransistor. b Close-up optical microscopic image of MoS2 channel region. Scale bar 10 μm. c Raman spectrum of multi-layered MoS2. The wavenumber difference between the in-plane \(E_{2g}^1\) and out-of-plane A1g modes was 24.8 cm−1. d AFM height profile of MoS2 indicating film thickness of 10 nm. e Dark condition transfer characteristics of the MoS2 phototransistor at different drain voltages: 150, 250, and 500 mV. f Dark condition output characteristics of the MoS2 phototransistor.
