Fig. 2: Photoresponse of MoS2 phototransistors.
From: High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics
Effects of light illumination with blue LED at different optical power densities at VDS = 150 mV for a HfO2 phototransistor and b SiO2 phototransistor. Close-up of the illumination curves in the accumulation mode region of c the HfO2 phototransistor and d the SiO2 phototransistor. e Photocurrent generation comparison of HfO2 and SiO2 phototransistors under illumination at 1.5 mW cm−2. f Photocurrent (IPH) versus optical power density under varying gate voltages and constant VDS = 150 mV.
