Fig. 2: Temperature and gate-voltage dependence of ESR spectra of the MoS2 transistor. | Communications Materials

Fig. 2: Temperature and gate-voltage dependence of ESR spectra of the MoS2 transistor.

From: Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance

Fig. 2

a ESR spectra measured at a gate voltage (VG) of \(V_{\mathrm{G}} = 2\;{\mathrm{V}}\) and a drain voltage (VD) of VD = 1 V. b ESR spectra measured at \(V_{\mathrm{G}} = 0\;{\mathrm{V}}\) and VD = 1 V. Distortion of the baseline of the spectra at low temperatures, typically below 40 K, is due to the background signal of the ESR cavity resonator.

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