Fig. 6: Calculated g-factor for various atomic vacancies and charge doping.
From: Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance
The g-factor calculated for the S, S2, and MoS3 vacancies in the MoS2 supercell of size 12 × 12 × 1 unit, with 1–12 injected electrons, are collectively displayed. Purple area indicates the range of the observed g-factors of Signal B (g = 1.987–2.003). For the case of bilayer (bL), types A, B, and C are defined depending on the arrangement of atomic vacancies (see Supplementary Fig. 3). These g-factors are calculated for the direction of external magnetic field perpendicular to the MoS2 plane (z-axis) (see Supplementary Fig. 10). a All calculated g-factors for Signal B. b Enlarged view near the observed g-factors of Signal B (g = 1.987–2.003).
