Fig. 3: Photoluminescence properties of Cs₂AgIn_xBi_1−xCl₆ compounds.

a Photoluminescence spectra, and (b) integrated photoluminescence intensity of Cs₂AgIn_xBi_1−xCl₆ powders (excitation wavelength-380 nm). Note: The XRD and Raman spectra of the samples with x = 0.7–0.95 are given in Supplementary Fig. 15 and Supplementary Fig. 16. c Photograph of Cs₂AgIn_xBi_1−xCl₆ compounds, in which the top image shows the samples under room light and bottom images show the samples under 365 nm wavelength UV irradiation. d Photoluminescence spectra of Ce:YAG, Bi_0.20In_0.80, Bi_0.15In_0.85, and Bi_0.10In_0.90 compounds excited at 430 nm wavelength for relative quantum yield measurements. e Photoluminescence-integrated intensity for Ce:YAG, Bi_0.20In_0.80, Bi_0.15In_0.85, and Bi_0.10In_0.90 compounds, where integrated intensity for covering the entire visible region is given in hollow black circles and integrated intensity for wavelength between 500 and 600 nm is given in hollow red circles. f Normalised photoluminescence spectra of Bi_0.10In_0.90 compound for a single crystal and powder compounds, where the inset photograph depicts the samples under room light and irradiation at 375 nm wavelength. The crystals are nearly 2 mm in size.