Fig. 1: Comparative representation of dc and THz resistivities as a function of temperature and THz frequency-dependent carrier dynamics.
From: Probing the evolution of electronic phase-coexistence in complex systems by terahertz radiation
a–c Comparison of resistivities obtained from DC and THz transport (at 1 THz). The shaded region indicates the prominent difference between DC and THz resistivities below the TMI. Insets show temperature coefficient of resistivity (\({{{{{\rm{TCR}}}}}}\);\(\,{{{{{\rm{TCR}}}}}}( \% )\,=\frac{-1}{{{{{{\rm{\rho }}}}}}}\frac{{{{{{\rm{d}}}}}}{{{{{\rm{\rho }}}}}}}{{{{{{\rm{dT}}}}}}}\times 100\)) plots in heating protocol. The temperature corresponding to maximum of \({{{{{\rm{TCR}}}}}}( \% )\) is the TMI of the film. d-f Complex conductivity (\({\sigma }^{* }\)) vs THz frequency spectra: the filled and void symbols represent the real (σ1) and imaginary (σ2) components of σ*, respectively. The solid lines are the fitted curves using Drude-Smith model.
