Fig. 1: Formation of G centers upon ns laser annealing.
From: Activation of telecom emitters in silicon upon ion implantation and ns pulsed laser annealing
a PL spectra of the sample processed with 20 s rapid thermal annealing process at different temperatures. b typical PL map of the sample processed with localized ns laser annealing. Each bright square corresponds to a spot treated with different lasing parameters. c PL spectra acquired under 488 nm CW excitation from regions lased at 0.58 mJ/cm2, 0.69 mJ/cm2, 0.82 mJ/cm2. d PL spectra acquired in the same conditions from regions lased at 0.84 mJ/cm2, 0.99 mJ/cm2, and 1.16 mJ/cm2. All measurements were performed at T = 10 K using a 488 nm excitation and normalized to the optical excitation power.
