Fig. 3: Cross-sectional TEM images of the as-implanted sample 4.
From: Highly 28Si enriched silicon by localised focused ion beam implantation
a shows a HAADF STEM cross-sectional image of the sample, with the the amorphous silicon (a-Si) implanted volume and the original crystalline silicon (c-Si) below. The amorphous-crystalline (a/c) interface is shown to be very sharp and ~250 nm below the surface. b shows a high-resolution cross-sectional TEM image along the amorphous-crystalline interface. c and d show the HRTEM images taken from within the amorphous (enriched) region (red area in (b)) and the crystalline substrate beneath (blue area in (b)), respectively. The associated FFT taken from each image is shown in the inset. The rings observed in the FFT of part (c) taken above the interface indicate that the implanted volume is amorphous as compared to the single crystalline substrate beneath.
