Fig. 4: Cross-sectional TEM images of sample 5 post-anneal.
From: Highly 28Si enriched silicon by localised focused ion beam implantation
a shows the bright field (BF) STEM cross-sectional image of the annealed sample. The enriched volume is shown to be free of any defects barring a narrow layer found ~ 225 nm below the surface. A series of HRTEM images taken of areas across the sample corresponding to different distances from the implanted surface (as denoted by the coloured boxes in (a)) are shown in (b–e) where the associated FFT taken from each image is shown in the inset. The similarity of the FFTs taken from the near-surface region (b) and the single crystalline substrate beneath the implanted volume (e) verifies the complete single crystalline regrowth of the enriched volume. d shows the presence of an extrinsic dislocation loop within the defect layer.
