Fig. 6: Synaptic functionality of plasma-treated MoS2 memristor.
Switching characteristics and emulation of synaptic function in optimal-power plasma-treated MoS2 memristor. a ID versus VD characteristics of optimal-power plasma-treated MoS2 memristor at VG = 0 V, arrows show the sweep direction, scan rate was kept 2 Vs−1. b Endurance of HRS (sweep 1) and LRS (sweep 2) state at VD = 0.5 V over 100 cycles. c Endurance of switching ratio (ILRS/IHRS) VD = 0.5 V over 100 cycles. d Post-synaptic current (ID) versus pulse number, showing long-term potentiation and depression, set pulse amplitude was +20 V with an on-off time of 1 ms, and reset pulse amplitude was −20 V with an on-off time of 1 ms; and current was measured at source-drain bias VD at 0.1 V. e Post-synaptic current versus pulse number, set pulse amplitude was +20 V with an on-off time of 1 ms, and reset pulse amplitude was −20 V with an on-off time of 1 ms; the current was measured at source-drain bias VD at 0.01 V for 20 switching cycles. f The measured change in synaptic weight as a function of the time interval (Δt) between paired pulses of 20 V and −20 V with on time 1 ms, blue data points are for positive pulse pair and red data points are for negative pulse pair and the solid lines are exponential fits. VG = 0 V for all measurements.
