Table 1 Comparison of different memristive devices based on MoS2
Ref | Material (thickness, growth) | Device Geometry | Channel Length (μm) | Channel Width (μm) | Switching Ratio | Switching Voltage Range (V) |
|---|---|---|---|---|---|---|
Monolayer MoS2, CVD | planer | 5 | 100 | 102 | ±80 V | |
Monolayer MoS2, CVD | planer | 0.9 | 0.7 | 103 | ±30 V | |
Monolayer MoS2, CVD | planer | 8.5 | 6 | 10 | ±20 V | |
few layer MoS2, Exfoliated | planer | 2 | 5 | 10 | ±20 V | |
multi-layer MoS2, mechanically Exfoliated | Planer | NA | NA | 101 | −0.5 to 2 V | |
Monolayer MoS2, CVD | planer | 0.6 | 2 | 105 | ±5 V | |
Our work | Monolayer MoS2, CVD | planer | 5 | 25 | 104 | ±10 V |
