Fig. 1: Transmission Electron Microscopy of a reference scandium nitride film deposited on a c-sapphire substrate.
From: Improving the thermoelectric performance of scandium nitride thin films by implanting helium ions

a Bright field TEM micrograph of a reference sample of ScN thin film deposited on a Al2O3 substrate. The columnar nature of the two growth variant type grains can be observed in the inset a. Electron diffraction patterns of both ScN and Al2O3 are displayed in the inset b and c, respectively, confirming the epitaxy relationship between the film and the substrate.