Fig. 10: Simulation of the post-implantation defects and helium atom distribution in scandium nitride films.
From: Improving the thermoelectric performance of scandium nitride thin films by implanting helium ions
a Displacement per atom (dpa) and b concentration profiles as function of depth, calculated using SRIM code for a cumulative multi-energy He-1dpa implantation – 10 keV (green), 20 keV (red), 35 keV (dark blue), 50 keV (light blue) and the sum (gray).
