Fig. 12: Fitted models of the measured signal of a helium-implanted scandium nitride film annealed at 1273 K.
From: Improving the thermoelectric performance of scandium nitride thin films by implanting helium ions
Fitting of the amplitude (a) and phase (b) of the modulated thermoreflectance signal by a multilayered model of the He-implanted sample annealed at 1273 K. Model: Transducer Au 50 nm (Req = 0.167 10−8 m2.K.W−1); ScN film 220 nm (Req = 2.00 10−8 m2.K.W−1); Al2O3 Interface 200 nm (Req = 3.75 10−8 m2.K.W−1); Al2O3 substrate 500 µm, κ = 46 W.m−1.K−1.
