Fig. 3: Influence of helium implantation and subsequent in-situ annealing on the electronic transport properties of a scandium nitride film.
From: Improving the thermoelectric performance of scandium nitride thin films by implanting helium ions
Resistivity (a) and charge carrier mobility (b) measurements of the ScN reference and He-implanted films. Point-like defects induced by implantation of He ions are recovered when a temperature of approx. 750 K is reached, similar to Ar-implanted ScN thin films43. The charge carrier concentration were measured to be constant over the whole temperature range. Double arrows indicate that the measurements are reversible while single arrows characterize irreversible measurements due to partial defect recovery. Standard deviations are 4% and 5% for the resistivity and mobility, respectively.
