Fig. 4: Fitting curves of helium-implanted films during the first measurement where point-like defects are being recovered upon heating. | Communications Materials

Fig. 4: Fitting curves of helium-implanted films during the first measurement where point-like defects are being recovered upon heating.

From: Improving the thermoelectric performance of scandium nitride thin films by implanting helium ions

Fig. 4

a ln(ρ) = f(1/T), yielding an energy activation of the defect recovery process of EA = 130 meV, b ln(ρ) = f(1/T1/4), fitted using a Mott law, unveiling a Variable Range Hopping (VRH) conduction behavior with a Mott temperature of TM = 5 K.

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