Fig. 5: Transmission Electron Microscopy micrographs of helium-implanted films on c-sapphire substrates (no annealing).
From: Improving the thermoelectric performance of scandium nitride thin films by implanting helium ions
a Under-focused and b over-focused bright field micrographs, unveiling the presence of nanocavities (5–20 nm) induced by He species on the as-implanted sample. The cavities are aligned with the grain growth, suggesting that their formation is favored in the grain boundaries regions.
